The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. Light weight and compact; Uniform baking temperature; High fluorine resistance; Low outgassing; Little heavy metal contamination

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. Light weight and compact; Uniform baking temperature; High fluorine resistance; Low outgassing; Little heavy metal contamination

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. High vacuum angle valve; Type: manual, bellows seal; Flange size: 16 ~ 50; Heater type: H1 (80°C), H2 (100°C), H3 (120°C); Auto switches not available

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. Compatible with inert gases; Flange sizes: 25 and 40; Operating pressure range: Atmospheric to 0.01 Pa; Operating temperature: 5-40°C; Voltage options: (100, 110, 200, 220, 230, 240)VAC; (12, 24)VDC

All metal elbow type speed controller with One-touch fittings; Threaded connection: M5 x 0.8/10-32UNF through 1/2", R, NPT and G; Tube connection: 5/32" - 1/2" (inch), 4 - 12mm (metric); Meter-in and meter-out types available; Available without Ni-plating for better performance in welding environments

All metal elbow type speed controller with One-touch fittings; Indicator for easy flow rate adjustment before mounting and operating the cylinder; Available without Ni-plating for better performance in welding enviromnents; Threaded connection: M5 x 0.8/10-32UNF through 1/2", Rc, NPT and G; Tube connection: 5/32" - 1/2" (inch), 4 - 12 mm (metric)

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.Light weight and compact; Uniform baking temperature; High fluorine resistance; Low outgassing; Little heavy metal contamination

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.Light weight and compact; Uniform baking temperature; High fluorine resistance; Low outgassing; Little heavy metal contamination

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.High vacuum angle valve; Type: manual, bellows seal; Flange size: 16 ~ 50; Heater type: H1 (80°C), H2 (100°C), H3 (120°C); Auto switches not available

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.One-touch connection & release, requires no tools; Lightweight & compact; Auto switch capable; XLAQ: single acting, normally closed, bellows seal; XLAQ: flange sizes are 16, 25, 40, 50; XLDQ: 2-step control, single acting

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. Light weight and compact; Uniform baking temperature; High fluorine resistance; Low outgassing; Little heavy metal contamination

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. High vacuum angle valve; Type: manual, bellows seal; Flange size: 16 ~ 50; Heater type: H1 (80°C), H2 (100°C), H3 (120°C); Auto switches not available

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. Light weight and compact; Uniform baking temperature; High fluorine resistance; Low outgassing; Little heavy metal contamination

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. Compatible with inert gases; Flange sizes: 25 and 40; Operating pressure range: Atmospheric to 0.01 Pa; Operating temperature: 5-40°C; Voltage options: (100, 110, 200, 220, 230, 240)VAC; (12, 24)VDC

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers. Light weight and compact; Uniform baking temperature; High fluorine resistance; Low outgassing; Little heavy metal contamination

The valve does not contain heavy metals such as Ni (nickel) or Cr (chrome) and a low sputtering yield also helps to minimize heavy metal contamination of semiconductor wafers.